The Effect of Semiconductor , He-Ne laser and Beta , Gamma irradiation on Leishmania donovani promastigote
Abstract
This work evaluated the effect of Semiconductor , He-Ne laser and Beta , Gamma irradiation on Leishmania donovani promastigotes . The experiment included a control and tetraplicate of L. donovani promastigotes exposed to Semiconductor laser in (5, 10, 20, 30) minute , with wavelenghth 532 nm ; also use He-Ne laser in (5, 10 , 20 , 30 ) minute , with wavelenghth 6328 A° ; and effect of Beta and Gamma irradiation by 137Cs isotopes , in dose 1.776*10-4
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ISSN (Paper)2224-7181 ISSN (Online)2225-062X
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