The Effect of Semiconductor , He-Ne laser and Beta , Gamma irradiation on Leishmania donovani promastigote

Raad Said Abd, Nebras Rada Mohammed, Khawlah Hori Zghair, Hanaa Salih Sabaa, Israa Salm Mousa

Abstract


This work evaluated the effect of Semiconductor , He-Ne laser  and Beta , Gamma irradiation on  Leishmania donovani promastigotes . The experiment included a control and tetraplicate  of L. donovani promastigotes  exposed to  Semiconductor laser  in (5, 10, 20, 30) minute , with wavelenghth 532 nm ; also use He-Ne laser in (5, 10 , 20 , 30 ) minute , with wavelenghth 6328 A° ; and effect of Beta and Gamma irradiation by 137Cs  isotopes  , in dose 1.776*10-4


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ISSN (Paper)2224-7181 ISSN (Online)2225-062X

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