Temperature and Recombination Lifetime Effects on Amorphous Silicon Quantum Dot’s Light Emitting Diodes

Walaa Khalel Jameel, Moafak Cadim Abdulrida

Abstract


The internal quantum efficiency of amorphous silicon quantum dots (a-Si DQs, has been studied theoretically as a function of temperature and recombination lifetime of excited carriers.  The increase in the internal quantum efficiency with decreasing QD size was attributed to the quantum confinement effects in a-Si QDs. This type of confinement has changed the optical energy gap of the material from indirect to nearly direct transition structure. It is found that the visible-light emission from a-Si QDs is most efficient at room temperature, and the efficiency increases with temperature and decreases with increasing recombination lifetime.

Keywords: Nano-LED, Quantum dots, a-Si, Quantum confinement.


Full Text: PDF
Download the IISTE publication guideline!

To list your conference here. Please contact the administrator of this platform.

Paper submission email: APTA@iiste.org

ISSN (Paper)2224-719X ISSN (Online)2225-0638

Please add our address "contact@iiste.org" into your email contact list.

This journal follows ISO 9001 management standard and licensed under a Creative Commons Attribution 3.0 License.

Copyright © www.iiste.org