Effects of Number of Wells and Cavity Length in Limitation the Optimum Symmetric Multiple Quantum Well Laser

Abstract

In this research several main parameters/factors that effect on each of structures of semi-conductor lasers have been investigated. This investigation depends mainly on two procedures: first one is classification for these parameters including each of threshold current density, injecting  threshold carrier density, absolute threshold current density and their relations with each of number of wells and cavity length, and the second is simulation process for the previous parameters with variable values of number of wells and cavity length. Non ideal contribution to the total output current like Auger recombination, Interface recombination and Leakage recombination have also been estimated through the simulation process. In other words, this research is devoted to specify the optimum performance of multi-quantum well structure of semi-conductor laser.The calculations were performed for a representative separate confinement multiple quantum well laser structure in GaAs/AlGaAs system of: 7.5nm as a quantum well size, 250 nm as a thickness of the waveguide region and 8nm as a barrier size.