Dielectric Function in Highly doped GaN Semiconductor

F. M. Abou El-Ela, A. Z. Mohamed


Inverse of Dielectric Function of highly doped  GaN has been calculated by using Lindhard formalism.  For simplicity collisional damping,  nonparabolicity and the coupling  between various  electrons and holes  were  neglected. The inverse of the dielectric function for both Fermi- Dirac and Maxwell Boltzman distribution showed antiscreening peak at small phonon wave vector. On the contrary, both Thomas Fermi and Debye inverse of dielectric function showed screening as expected at same phonon wave vector. There is a sharp growth in the antiscreening peak in the inverse of dielectric function at carrier temperature 77 K and 300K, accompanied with a singularity at carrier concentration greater than .

Key words: dielectric function, GaN and screened optical phonon scattering rate

Full Text: PDF
Download the IISTE publication guideline!

To list your conference here. Please contact the administrator of this platform.

Paper submission email: APTA@iiste.org

ISSN (Paper)2224-719X ISSN (Online)2225-0638

Please add our address "contact@iiste.org" into your email contact list.

This journal follows ISO 9001 management standard and licensed under a Creative Commons Attribution 3.0 License.

Copyright © www.iiste.org