Effect of Al atom Doping on Band Gap of Rectangular Cross Section Si nanowire

Sana Kausar, Shirish Joshi, Syed Mujahid Husain


In this work band gap of hydrogen-passivated, free-standing silicon nanowires, oriented along [111] direction with rectangular cross section was studied. Further the effect of doping of Al atom on band structure is also analyzed by using GGA approximation. it is found that the band gap of H-SiNW  dramatically reduced upon doping and  nanowire start behaving as  bulk silicon.

Keywords:DFT, GGA, nanowire

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ISSN (Paper)2224-719X ISSN (Online)2225-0638

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