A NOVEL DOUBLE GATE FINFET TRANSISTOR: OPTIMIZED POWER AND PERFORMANCE ANALYSIS FOR EMERGING NANOTECHNOLOGIES

Abstract

Abstract—FinFET technology has been proposed as a promising alternative for deep sub-micron CMOS technology,because of its superior device performance, scalability, lower leakage power consumption and cost-effective fabricationprocess. Fin-type field-effect transistors (FinFETs) are capable substitutes for bulk CMOS at the nano-scale. Previous workshave studied the performance or power advantages of FinFET circuits over bulk CMOS circuits. This paper elucidates thedependability analysis of Average power, Leakage power, Leakage current and Delay of AND gate using double gateFinFET. Our experiments compare FinFET circuits at different voltages at 45 nm technology in virtuoso tool of cadence,showing that DG FinFET circuits have better dependability and scalability.Keywords—double gate FinFET; fin width; low power circuit; device analysis