The Influence of Dy2O3 doping on the Electrical Properties of ZnO-Based Varistor

Abstract

ZnO is a ceramic material which tends to intrinsically form as an n-type semiconductor material. In this paper, the effect of Dy2O3 doping on the grain size and the electrical properties of ZnO-based varistor has been investigated, where we studied the I-V nonlinear coefficient behavior, the breakdown voltage, the potential gradient, leakage current, voltage per grain boundary before and after doping with Dy2O3 at concentration of 10-3 mol% and sintering temperature of 1050, 1100, and 1150oC.

Keywords: ZnO varistor, Dy2O3 doping, electrical properties.