Insertion Layer in a Mid-Ir Band-Pass Filter Structure to Improve Optical Transmittance

Hariyadi Soetedjo, Gunawan Setyo Prabowo


Insertion of a single Ge layer deposition (denoted as layer xGe) has been carried out to the band-pass filter structure to improve optical transmittance in a mid-IR region. The filter structure was of Air/[Ge/ZnS]N xGe/Quartz constructed from Ge/ZnS period layer deposition. From the modeling done, by introducing a layer period, N = 10, each layer thickness of Ge and ZnS prepared is 500 nm, the optical transmittance was found to improve significantly about 0.9 for xGe = 0.80 (layer thickness of 80% of Ge thickness) compare than that of the greater value.

Keywords : band-pass filter, infrared, transmittance, Ge, ZnS


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ISSN (Paper)2224-3186 ISSN (Online)2225-0921

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