Modeling of Ultra Low Capacitance Transient Voltage Suppression Diode for High ESD Protection

S. Pharkphoumy, M. Zumuukhorol, M.H. Lee, D.G. Kim, S.S. Choi, D.H. Cho, C.J. Choi, K.H. Shim


To improve key properties such as ultra-low capacitance (ULC) and high-voltage (HV) breakdown, we have performed a simulation work about transient voltage suppression (TVS) diodes. ULC-TVS diode was designed to employ a double deep trench to cut off the various parasitic effects that may degrade the device performance. The electrostatic discharge (ESD) protection is the targeting for the best applications in high-frequency and high-speed ICs. In this work, the device could present excellent performance in terms of very responsive ESD properties, high breakdown voltage, low leakage current, and very low capacitance level. The double trenches are aligned to the top electrode contact to restrict field crowding effects by the strong electric field intensity. The performance would be sufficient for the robust ESD nature up to IEC61000-4-2 (30 kV) and compatible with strong surge protection IEC61000-4-5 (10A). Their electrical properties have been evaluated for structure from simulation and the results are obtained at the device parameters. Several process of device design related effects on the electrical capability and can be optimized.

Keywords: ULC-TVS diode, simulation (TCAD), characteristics, capacitance, ESD protection.

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ISSN (Paper)2224-3232 ISSN (Online)2225-0573

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