Optical Properties of InxGa1-xNyAs1-y/GaAs Heterostructure Quantum Well Lasers for 1.3 µm Laser Emission with Different In/N Concentrations

Abstract

We investigate the optical gain of InGaNAs/GaAs heterostructure quantum well lasers (QWL) with an emission wavelength of 1.3 µm and compare the results with that of an equivalent nitrogen-free InGaAs/GaAs structure. The effects of parameters and its influence on the optical gain are identified. It is shown that the gain of InGaNAs quantum wells is reduced by incorporating N into a well layer. Secondly, the temperature dependence of optical gain is also investigated. In this study, we reviewed and compared the theoretical results of optical gain of dilute nitride systems for better understanding of structure for high-temperature and high-speed operation of device characteristics in fiber optic communications.

Keywords: Band Anticrossing Model (BAC), Dilute Nitride, Fabry-Parot structure, Opto-electronics devices, Quantum well lasers, Spontaneous emission, Semiconductor laser