The Theoretical Investigation of InGaAs/GaAs Quantum Well Lasers Systems

Abstract

The host material system for long wavelength novel dilute nitride devices is InGaAs/GaAs quantum well systems. This system is the starting point to study the effect of nitrogen incorporation for 1.3-1.5 µm wavelength emission devices. The material gain and light-current-voltage (L-I-V) characteristics of InGaAs/GaAs Fabry–Parot type quantum well laser structures were theoretically investigated. The effect of temperatures and carrier concentrations on optical gain and L-I-V characteristics of nitrogen-free systems are simulated.

Keywords: Fabry-Parot structure, Opto-electronics devices, Optical gain, Quantum well lasers, Semiconductor laser