An Analysis of RF Sputtering Power and Argon Gas Pressure Affecting on ITiO Films Characteristics

Abstract

Titanium-doped indium oxide (ITiO) is widely  used as a contact for photovoltaics as a high-performance  transparent conducting oxide. The titanium-doped indium oxide (ITiO) films were deposited on corning glass substrates using RF magnetron sputtering method. In this research, we verified  the effect of RF sputtering power and argon gas pressure on the structural and electrical properties of the films using a 2.5 wt% TiO2 -doped In2O3 target. The deposition rate was in the range of 0 to 35 nm/min under 2.5 to 12.5 mTorr of gas pressure and 100 to 250 W of RF power. As a result of the lowest volume resistivity of 4.9×10-4 ?-cm and the average optical transmittance of 75% were obtained for the ITiO film, using 200 W RF power and 10 mTorr Ar gas pressure. This volume resistivity is low enough for being transparent conducting layer in various electro-optical devices.

Keywords RF sputtering, Argon gas pressure, Transparent conducting oxide, Titanium-doped indium oxide, TiO₂, In₂O₃